[12p-N104-1~7] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[12p-N104-1] FEM Analysis for lowering writing current of phase-change device with nanostructure

〇(M1C)Ryoma Shirakawa¹, Yin You¹ (1.Gunma University)

Keywords:Phase-change memory, Nanostructure, Finite element method

With the development of IoT and AI, non-volatile memory such as ReRAM and PCM is drawing attention. In particular, PCM utilizing the transition between the amorphous phase and the crystalline phase has characteristics such as high speed, large capacity, and excellent durability. However, it is necessary to reduce the operating current for mass production of PCM and application to computers that imitate the human brain. In this study, we proposed PCM with nanostructures, analyzed it by FEM, and clarified the dependence of the contact position between the electrode and the phase change layer in order to reduce the operating current.