[12p-N104-1~7] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [12p-N104-2] Frequency multiplication in a Ge–Te based CBRAM

〇(D)Yifei Yin¹ (1.Sophia Univ)

Keywords:Ge-Te based CBRAM, Frequency multiplication, Multiplier

The phenomenon that active metal ions such as Ag move in amorphous chalcogenide, which is a solid electrolyte, via an electrochemical reaction is being studied not only as an interesting physical phenomenon but also for a wide range of applications such as sensors and memories. We are working on the development of a frequency multiplication element using a GeTe-based thin film used in a phase change memory. This time, we created a conductive bridge memory (CBRAM) element and obtained harmonic output characteristics depending on the SET state and RESET state.