[12p-N204-8~11] 8.6 Plasma Electronics English Session

▲ [12p-N204-11] [INVITED] Atomic Layer Etching Processes for Dielectric and Metals

〇Heeyeop Chae^1,2、Yongjae Kim¹ (1.SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU)、2.School of Chemical Engineering, Sungkyunkwan University (SKKU))

キーワード：Atomic Layer Etching, Plasma Atomic Layer Etching, Thermal Atomic Layer Etching

The critical dimensions of semiconductor devices are continuously shrinking with 3D device structure and it is approaching to nanometer scale. The demand for dimension control in angstrom level is drastically increasing also in etching processes and atomic layer etching (ALE) processes are being actively studied and developed for various dielectric and metals. In this talk, ALE processes for dielectric materials and metals will be discussed including thermal and plasma processes. Firstly, oxide removal in nanometer scale with ALE processes will be discussed for dry cleaning as potential alternatives for wet processes. We developed plasma and thermal atomic layer etching processes for SiO₂ (native oxide) removal.^1,2) Highly selective SiNx ALE over silicon was also demonstrated with fluoroether compounds which are considered as potential altenatives of global warming fluorocarbon gases.³⁾ Secondly, ALE processes for various metals and metal oxides will be discussed including cobalt, molibdenium, and titanium nitride. Thermodynamic and kinetic analysis will be discussed.

References:
1) K. Koh, Y. Kim, C.-K. Kim, H. Chae, J. Vac. Sci. Technol. A, 36(1), 10B106 (2017)
2) Y. Cho, Y. Kim, S. Kim, H. Chae, J. Vac. Sci. Technol. A, 38(2), 022604 (2020)
3) Y. Kim, S. Lee, Y. Cho, S. Kim, H. Chae, J. Vac. Sci. Technol. A, 38(2), 022606 (2020)