Analysis of electronic states of β-Ga2O3 by a tight binding method

Kazuki Irita; Jo Okada; Futo Hashimoto; Hajime Tanaka; Nobuya Mori

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

3:30 PM - 3:45 PM

△ [12p-N206-10] Analysis of electronic states of β-Ga₂O₃ by a tight binding method

〇(M1)Kazuki Irita¹, Jo Okada¹, Futo Hashimoto¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:oxide semiconductor

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Presentation information

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12p-N206-10] Analysis of electronic states of β-Ga2O3 by a tight binding method

△ [12p-N206-10] Analysis of electronic states of β-Ga₂O₃ by a tight binding method