The 82nd JSAP Autumn Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

5:30 PM - 5:45 PM

[12p-N206-17] Emission Property of Zn doped MgO films

〇Wataru Kosaka1, Kotaro Ogawa2,1, Kentaro Kaneko3, Tomohiro Yamaguchi1, Shizuo Fujita3, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.ORC, 3.Kyoto Univ.)

Keywords:MgZnO, VUV, CL

Zn doped MgO films were grown on MgO substrates by mist CVD method. The emission properties, which were evaluated by CL measurements will be shown.