The 82nd JSAP Autumn Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Katayama Tsukasa(Hokkaido Univ), Riena Jinno(Univ of Tokyo)

3:15 PM - 3:30 PM

△ [12p-N206-9] Epitaxial growth of β-(InxGa1-x)2O3 thin films by mist CVD

〇Yuki Kajita1, Hiroyuki Nishinaka1, Masahiro Yoshimoto1 (1.Kyoto Inst. of Tech.)

Keywords:wide-bandgap semiconductor, gallium oxide, mist chemical vapor deposition