2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

12 有機分子・バイオエレクトロニクス » 12.3 機能材料・萌芽的デバイス

[12p-N207-1~16] 12.3 機能材料・萌芽的デバイス

2021年9月12日(日) 13:30 〜 18:00 N207 (口頭)

山下 兼一(京都工繊大)、水野 斎(奈良先端大)、山本 洋平(筑波大)

17:30 〜 17:45

[12p-N207-15] Improvement of dark current stability of ZnO-based organic photodiode by control of annealing condition

Theodorus Jonathan Wijaya1、Mari Koizumi1、Sunghoon Lee1、Tomoyuki Yokota1、Takao Someya1 (1.Dept. of EEIS, The Univ. of Tokyo)

キーワード:organic photodiode, dark current, flexible electronics

Dark current in organic photodiodes (OPDs), a dominating factor of noise density, is well-known for its increase upon illumination of strong light. Recently, the mechanism of this instability in OPD with ZnO electron transfer layer was reported [J. Huang et al., ACS Nano 15, 1753 (2021)]. However, the strategy to suppress the dark current increase in ZnO-based OPDs remains unexplored. Here, using an inverted structure of bulk heterojunction OPDs, we demonstrated that the dark current increase can be suppressed by control of annealing temperature (Tanneal). The devices with structure: glass/ITO (70 nm)/ZnO (30 nm)/P3HT:PC61BM (250 nm)/MoOx (10 nm)/Ag were fabricated using spin coating and a standard evaporation system. We successfully decreased the ratio of dark current density after illumination to its initial value from 1.0x102 to 0.64 by raising Tanneal from 180 to 350oC. Our results provide insights into the importance of annealing conditions to the dark current stability.