[12p-N221-1~11] 2.1 Detection Devices

△ [12p-N221-2] Detection characteristics of BGaN diodes in high temperature environments

〇Kosuke Hayashi¹, Hisaya Nakagawa², Atsuya Miyazawa¹, Seiya Kawasaki³, Yoshio Honda⁴, Hiroshi Amano^4,5, Yoku Inoue¹, Toru Aoki², Takayuki Nakano^1,2 (1.Shizuoka Univ., 2.R.I.E. Shizuoka Univ., 3.Nagoya Univ., 4.IMaSS Nagoya Univ., 5.Akasaki Reserch Center)

Keywords:GaN, semiconductor detector, radiation detector