[12p-N301-1~15] 6.1 Ferroelectric thin films

▼ [12p-N301-4] Enhanced Crystallization of Ferroelectric Lead Zirconate Titanate (PZT) Ultra-thin Film by Solution-Combustion Synthesis Method with a Lead Titanate (PTO) Seeding Process

〇(M2)ZHONGZHENG SUN¹, Yutaka Majima¹ (1.Tokyo Tech)

Keywords:Ferroelectric PZT ultrathin film, Low temperature, Solution-combustion synthesis method

Based on the previous studying, primary state of crystallization of 37 nm PZT thin film could be achieved at 400 ^oC by solution-synthesis method with a seeding process. To obtain the ferroelectric PZT ultrathin film at low temperature for the better integration with the modern electronic devices, solution-combustion synthesis method together with a PTO seeding process are applied for the fabrication of PZT ultrathin film at 450 ^oC. Final PZT thin film with a seeding process could display an enhanced crystallization property than the one without the seedings concluded from the SEM results. Thus, without stacking the layers of PZT thin films, a better crystallized PZT thin film could be available through solution-combustion synthesis method with a seeding process at 450 ^oC, which is compatible with the high density complementary-metal-oxide-semiconductor devices and enables the better quality PZT thin film at an ultrathin thickness for other promising applications like ferroelectric tunneling junctions.