[12p-N304-1~14] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[12p-N304-7] Design and analysis of an 8kB ULVR-SRAM macro for near-threshold voltage operations

〇Takumi Hara¹, yusaku shiotsu¹, Shuu'ichirou Yamamoto¹, Satoshi sugahara¹ (1.FIRST, Tokyo inst. of Tech.)

Keywords:Power-gating, SRAM, low power