The 82nd JSAP Autumn Meeting 2021

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13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

Sun. Sep 12, 2021 1:30 PM - 5:15 PM N305 (Oral)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

1:30 PM - 1:45 PM

[12p-N305-1] Non-radiative Recombination Lifetime and Effective Dislocation Radius in an n-GaN Layer on M-3D Substrates

〇Kazuhiro Mochizuki1, Hiroshi Ohta1, Fumimasa Horikiri2, Tomoyoshi Mishima1 (1.Hosei Univ., 2.SCIOCS)

Keywords:non-radiative recombination, gallium nitride, dislocation