[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-2] Analysis of the origin of 2step C-V characteristics in polarization junction substrates

〇Kazushi Onimura¹, Takuya Hoshii¹, Taihei Matsuhashi¹, Hiroaki Okita¹, Kuniyuki kakushima¹, Hitoshi wakabayashi¹, Kazuo Tsutsui¹, Akira Nakajima² (1.Toukou Univ., 2.Sansou Inst.)

Keywords:GaN, polarization junction substrates