[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-3] Low on-resistance p-n junction diode using highly Ge-doped GaN substrate II
~ reduced forward-current-density dependence on anode-electrode diameter ~

〇Hiroshi Ohta¹, Naomi Asai¹, Kazuhiro Mochizuki¹, Horikiri Fumimasa², Narita Yoshinobu², Mishima Tomoyoshi¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:p-n junction diode, Ge-doped GaN substrate, Anode electrode diameter dependence

We evaluated the anode electrode diameter dependence of the forward characteristics of a p-n junction diode using a high-concentration Ge-doped GaN substrate. As a result, the decrease in current density due to the increase in diameter was smaller in the p-n diode on the Ge-doped (6-8×10¹⁸ cm^-3) substrate than in the p-n diode on the normal Si-doped (2×10¹⁸ cm^-3) substrate. From the above, it was clarified that increasing the concentration of the substrate is also advantageous for increasing the diameter of the p-n diode.