[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-5] Electrical Properties of SiO₂/GaN MOS Capacitors Fabricated on Mg-Implanted GaN Activated by Ultra-High-Pressure Annealing

Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Hideki Sakurai², Tetsu Kachi³, Akitaka Yoshigoe⁴, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC ATI, 3.Nagoya Univ. IMaSS, 4.JAEA)

Keywords:Ultra-High-Pressure Annealing, Mg-Implanted GaN, SiO2/GaN MOS

Mg-implantation technology is important to realize vertical GaN power devices. Recently, it has been reported that the activation ratio of acceptors was as high as about 80% in Mg-implanted GaN activated by ultra-high pressure annealing (UHPA). On the other hand, there are no reports on the electrical properties of GaN MOS devices subjected to UHPA. In this study, we studied the electrical properties of SiO₂/GaN MOS capacitors fabricated on Mg-implanted GaN activated by UHPA.