[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-6] Electrical Properties of P-Channel GaN MOSFETs Fabricated by Mg-implantation and Ultra-High-Pressure Annealing

Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Hideki Sakurai², Tetsu Kachi³, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC ATI, 3.Nagoya Univ. IMaSS)

Keywords:Ultra-High-Pressure Annealing, Mg-Implanted GaN, MOSFET

Mg-implantation technology is important to realize vertical GaN power devices. Recently, it has been reported that p-type GaN was fabricated by Mg-implantation and ultra-high-pressure annealing (UHPA). On the other hand, there are no reports on the electrical properties of p-GaN MOS devices subjected to UHPA and the characteristics of holes at the insulator/GaN interface is still unclear. In this study, we studied the electrical properties of p-channel GaN MOSFETs fabricated by Mg-implantation and UHPA.