2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2021 » 4.6 Terahertz Photonics

[12p-N405-1~11] 4.6 Terahertz Photonics

2021年9月12日(日) 13:00 〜 16:00 N405 (口頭)

瀧田 佑馬(理研)、村手 宏輔(名大)

13:45 〜 14:00

[12p-N405-4] Measurement of Optically Dense Semiconductor with 1020 cm-3 Carrier Density by Terahertz Time-Domain Ellipsometry

〇(P)Verdad Canila Agulto1、Toshiyuki Iwamoto2、Hideaki Kitahara1、Kazuhiro Toya1、Valynn Katrine Mag-usara1、Masayuki Imanishi1、Yusuke Mori1、Masashi Yoshimura1、Makoto Nakajima1 (1.Osaka University、2.PNP)

キーワード:terahertz, ellipsometry, semiconductor

Terahertz (THz) time-domain ellipsometry measures the complex amplitude ratio of p- and s-polarizations reflected from a material. It is a reference-free measurement technique which is an advantage over THz time-domain spectroscopy. This study presents a THz ellipsometry system that offers a significantly higher precision than the conventional THz ellipsometry method. With the improved system, high carrier concentrations beyond the typical measurable range by THz time-domain spectroscopy can be evaluated. To demonstrate, GaN single crystals with different carrier densities up to 1020 cm-3 were investigated. We show that the carrier density and mobility parameters can be obtained accurately even at very high carrier concentrations. Thus, our system extends the usability of THz waves for the characterization of optically dense semiconductors and is applicable to both thick wafers and thin films on substrates.