[12p-S203-1~13] 6.3 Oxide electronics

△ [12p-S203-2] Resistive switching and neuromorphic function of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

〇(M1)Tomoasa Takada¹, Fukusima Yosiaki¹, Tsuchiya Takashi², Higuchi Tohru¹ (1.Tokyo Univ. Sci., 2.NIMS)

Keywords:resistive switching, neuromorphic function

A Pt/Ti_0.96Co_0.04O_2-δ/Pt thin film with a cross–point structure was prepared on a Pt/Al₂O₃ (0001) substrate by RF magnetron sputtering. This device exhibited a resistive switching property. The electrical conductivities of High Resistance State (HRS) and Low Resistance State (LRS) showed a behavior of thermal activation. The activation energy of HRS and LRS were ~0.68 and ~0.23 eV, respectively. Electrical conductivity as a function of the P_O2 of HRS and LRS both showed a behavior of electron–ion mixed conduction. These are suggested that the state of electrode interface differs between HRS and LRS. A new cross-point structure that forms electrodes inside the thin film showed an unique I–V curves. These results indicate that the distribution of oxygen vacancies at the top electrode interface depending on the current direction. It demonstrates that the Pt/Ti_0.96Co_0.04O_2-δ/Pt is a new type of switching device which resistance switching occurs at the changing state at the interface.