[12p-S203-1~13] 6.3 Oxide electronics

△ [12p-S203-9] High speed resistive switching in Ca₂RuO₄ thin films driven by the current-induced metal-insulator transition

〇Keiji Tsubaki¹, Atsushi Tsurumaki-Fukuchi¹, Yasuo Takahashi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

Keywords:metal-insulator transition, Ca2RuO4, Ruthenium oxide

In this study, we investigated the time dynamics of current-induced insulator-to-metal transitions in Ca₂RuO₄, which is an emerging phenomenon in strongly correlated electron systems, by conducting time-resolved current–voltage measurements for epitaxial thin films of Ca₂RuO₄/LaAlO₃ (001). As the results, we found that the Ca₂RuO₄ thin film has two-step current-induced transition, which causes gradual and steep resistance changes. Moreover, the film demonstrated that the transition time of the steep transition is in the order of 10⁻⁷ s, which is 10⁵ faster than that reported for bulk Ca₂RuO₄. The transition-time controllability suggests the promising potential of the current-driven transition for the applications to practical Mott-electronic devices.