[12p-S301-1~15] 6.2 Carbon-based thin films

[12p-S301-7] Evaluation of large-area diamond Schottky barrier diodes

〇Shinya Ohmagari¹, Takehiro Shimaoka¹, Hitoshi Umezawa¹, Hideaki Yamada¹ (1.AIST)

Keywords:diamond, Schottky, radiation

Ultrawide bandgap semiconductors have high displacement energy, low intrinsic carrier concentration, and high e-h generation energy. In particular, diamond which composed of a single element, high-temperature high-radiation proof switching action can be expected. In this study, we fabricated large-sized diamond SBDs in order to enhance forward current and the effective area of the sensor. As a result, a high rectification ratio of over 10⁹ was achieved on HPHT-grown IIb (100) and Ib (100) substrates.