The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-S302-1~17] 10.4 Semiconductor spintronics, superconductor, multiferroics

Sun. Sep 12, 2021 1:30 PM - 6:15 PM S302 (Oral)

Shinobu Ohya(Univ. of Tokyo), Kohei Hamaya(Osaka Univ.), Shinya Hikari(Tohoku Univ.)

1:30 PM - 1:45 PM

[12p-S302-1] Temperature dependence of electron-spin polarization in InGaAs quantum dot opto-spintronic device applied with electric field

Soyoung Park1, Satoshi Hiura1, Hang Chen1, Junichi Takayama1, Kazuhisa Sueoka1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)

Keywords:quantum dot, electric field effect, electron-spin polarization

Ⅲ-Ⅴcompound semiconductor quantum dots (QDs) have been expected as an optically active layer of opto-spintronics devices due to the suppressed carrier spin relaxation by their strong quantum confinements. We have demonstrated an electric field control of spin polarity in opto-spintronic devices using InGaAs QDs tunnel-coupled with a quantum well (QW). In this study, we have focused on the temperature dependence of electron-spin polarization in InGaAs QD/QW tunnel-coupled nanostructures by applying an external bias voltage along the growth direction.