The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-S302-1~17] 10.4 Semiconductor spintronics, superconductor, multiferroics

Sun. Sep 12, 2021 1:30 PM - 6:15 PM S302 (Oral)

Shinobu Ohya(Univ. of Tokyo), Kohei Hamaya(Osaka Univ.), Shinya Hikari(Tohoku Univ.)

5:00 PM - 5:15 PM

[12p-S302-13] Spin dependent transport characteristics in full ferromagnetic (In,Fe)Sb/(Ga,Fe)Sb p-n junctions

〇(P)Tu Thanh Nguyen1,2, Nam Hai Pham3,4, Duc Anh Le1,5,6, Masaaki Tanaka1,4 (1.EEIS Tokyo Univ., 2.HCMC Edu. Univ., 3.Tokyo Tech. Inst., 4.CSRN Tokyo Univ., 5.IEI Tokyo Univ., 6.PRESTO JST)

Keywords:Ferromagnetic semiconductors, p-n junctions, magnetoresistance

Ferromagnetic p-n junctions consist of n-(In0.84,Fe0.16)Sb (20 nm)/ GaSb (t = 0 – 4 nm)/ p-(Ga0.8,Fe0.2)Sb (40 nm) heterojunctions grown on p+-GaAs substrates by low-temperature molecular beam epitaxy. Magnetic properties investigated by magnetic circular dichroism spectroscopy indicate that the (In,Fe)Sb/(Ga,Fe)Sb samples have high TC (170 – 310 K). The typical (IV) characteristics of the samples with a spacer thickness t = 2 and 4 nm at 3.7 K are non-linear and show the rectifying properties. Large positive MR (58%) was observed at 300 mV at 3.7 K for the sample with a thin spacer (t = 2 nm), which may be due to the spin-splitting in the band structure of (In,Fe)Sb and (Ga,Fe)Sb under magnetic field. A negative MR (–1.3%) caused by the spin valve effect was observed at 50 mV at 3.7 K for the sample with t = 4 nm, which results from the parallel-antiparallel magnetization switching of the (In,Fe)Sb and (Ga,Fe)Sb layers. Our results indicate that the transport properties of the (In,Fe)Sb/(Ga,Fe)Sb heterostructures strongly depend on the spacer thickness, and the (In,Fe)Sb/(Ga,Fe)Sb p-n junctions with large MR (58%) are very promising for spintronics devices

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