2021年第82回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.4 半導体スピントロニクス・超伝導・強相関

[12p-S302-1~17] 10.4 半導体スピントロニクス・超伝導・強相関

2021年9月12日(日) 13:30 〜 18:15 S302 (口頭)

大矢 忍(東大)、浜屋 宏平(阪大)、新屋 ひかり(東北大)

17:15 〜 17:30

[12p-S302-14] Onset of ferromagnetism in Fe-doped magnetic semiconductors depending on the electron occupation of the impurity band

Takahito Takeda1、Shoya Sakamoto2、Le Duc Anh1,3,4、Yukiharu Takeda5、Shin-ichi Fujimori5、Miho Kitamura6、Koji Horiba6、Hiroshi Kumigashira6,7、Atsushi Fujimori8,9、Masaaki Tanaka1,10、Masaki Kobayashi1,10 (1.Grad. Sch. Eng., Univ. of Tokyo、2.ISSP, Univ. of Tokyo、3.IEI, Univ. of Tokyo、4.PRESTO, JST、5.MSRC, JAEA、6.IMSS, KEK、7.IMRAM, Tohoku Univ.、8.Dep. Phys., Univ. of Tokyo、9.Dep. Appl. Phys., Waseda Univ.、10.CSRN, Univ. of Tokyo)

キーワード:resonant photoemission spectroscopy, x-ray magnetic circular dichroism, ferromagnetic semiconductor

Ferromagnetic semiconductors (FMSs) are realized by introducing magnetic ions in semiconductor hosts. The magnetic interaction between the doped magnetic ions is mediated by the spin of the carriers, and such ferromagnetism is called carrier-induced ferromagnetism. Recently, to unveil the origin of the ferromagnetism of the Fe-doped III-V FMSs, the electronic structures and magnetic properties of the Fe-doped III-V FMSs have been studied by soft x-ray spectroscopy. In this study, we have focused on the paramagnetic Fe-doped III-V semiconductor (Ga,Fe)As. The comparison of the experimental results between paramagnetic (Ga,Fe)As and other Fe-doped III-V FMSs is helpful for unveiling the mechanism of the ferromagnetism. Based on the observations, we have found that the occupancy of the e states contributes to the appearance of the ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type.