[12p-S302-1~17] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [12p-S302-2] Tunneling Anisotropic Magnetoresistance above Room Temperature through Iron Quantum Wells

〇Muftah AlMahdawi^1,2、Qingyi Xiang¹、Yoshio Miura¹、Mohamed Belmoubarik¹、Keisuke Masuda¹、Shinya Kasai¹、Hiroaki Sukegawa¹、Seiji Mitani¹ (1.NIMS、2.Tohoku Univ.)

キーワード：spintronics, quantum well

The quantum well (QW) devices have found a wide use in semiconductor technologies. However, metallic QW devices are still at fundamental research interest. In a recent Letter [M. Al-Mahdawi et al., Phys. Rev. B 103, L180408 (2021)], we demonstrated the control of quantized levels formed in ultrathin Fe QWs in magnetic tunnel junctions (MTJs) devices. We found that the magnetization angle has a similar role as transistor's gate voltage, where both can control the energy positions of the quantization levels, resulting in a new QW tunneling anisotropic magnetoresistance (QW-TAMR) effect. The QW-TAMR effect resembles a spintronic analogue to the fine-structure of the atomic spectral lines, due to spin-orbit coupling (SOC). We will present further evidences on the band symmetry character of the tunneling conduction in our QW MTJs, by choosing different counter electrodes.