[12p-S302-1~17] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [12p-S302-8] Room-temperature two-terminal magnetoresistance ratios in Ge-based vertical spin-valve devices with Co₂FeSi

〇Michihiro Yamada^1,2、Atsuya Yamada³、Takamasa Usami²、Shinya Yamada²、Kentarou Sawano⁴、Kohei Hamaya² (1.JST PRESTO、2.CSRN Osaka Univ.、3.GSES Osaka Univ.、4.ARL Tokyo City Univ.)

キーワード：Semiconductor spintronics, Germanium, Vertical spin valve