[13a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13a-N304-1] A New Formulation of the Ground State of 2DEG in Channels with Surface Roughness and Impact of the Surface-Roughness-Limited Mobility

〇(DC)Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.U. Tokyo)

Keywords:surface roughness scattering, MOSFET, mobility

Understanding surface roughness scattering has become an important issue because surface roughness scattering dominantly degrades the mobility as the channel becomes extremely thin due to scaling. In this study, we propose a new formulation of the ground state of the two-dimensional electron gas in channels with surface roughness and apply it to the calculation of surface-roughness-limited mobility. As a result, the surface-roughness-limited mobility of Si nMOSFETs can be explained by physically reasonable parameters that are consistent with AFM and TEM observations.