Statistical analysis of characteristics variability in bulk MOSFETs at Low Temperatures

Tomoko Mizutani; Kiyoshi Takeuchi; Takuya Saraya; Masaharu Kobayashi; Toshiro Hiramoto

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Mon. Sep 13, 2021 9:00 AM - 12:00 PM N304 (Oral)

Yukinori Ono(Shizuoka Univ.)

9:30 AM - 9:45 AM

[13a-N304-3] Statistical analysis of characteristics variability in bulk MOSFETs at Low Temperatures

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ of Tokyo)

Keywords:MOSFET, cryogenic, variability

Characteristics variability of bulk MOSFETs at low temperature (LT) has statistically analyzed and compared with those at room temperature (RT). As a result, it was newly found that the DIBL variability increases at LT and the difference of threshold voltage between RT and LT follows the normal distribution.