[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[13a-N305-8] Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

〇Takashi Ota¹, Mitsutaka Sasaki¹, Ken Takayama¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

Keywords:GaN, FinFET, power device