[13a-N307-1~11] 17.3 Layered materials

[13a-N307-8] Light emitting diode of MoTe₂ lateral PN junction formed by dual back gate voltage modulation

〇Kairi Yamase¹, Shunya Hayashida¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

Keywords:Transition metal dichalcogenide, 2D material, Electroluminescence