[13a-S201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [13a-S201-1] Effect of thermal annealing on the properties of ZnO films deposited by mist chemical vapor deposition method

〇(D)Wai HtetSu¹, Chaoyang Li¹ (1.Kochi Univ. of Tech.)

Keywords:Zinc oxide, Mist chemical vapor deposition, Photocatalytic properties

Zinc oxide (ZnO) has been noticed as an active and selective catalyst material, which has shown to be more efficient than TiO₂ in photo-catalytically degrading several organic dyes. In this research, mist chemical vapor deposition (CVD) method was used to grow the ZnO thin films. The annealing effect on the structural properties of ZnO films was investigated as well. All surfaces of ZnO films were clearly wedge-like structures composed of ZnO nanosheets. With the thickness increasing from 300 to 750 nm, the average grain size of annealed ZnO films was slightly increased from 120 to 230 nm. The XRD patterns of ZnO thin films still revealed a strongly dominated (002) peak that corresponds to the preferred c-axis orientation after vacuum annealing. the transmission spectra of annealed ZnO films were kept around 90% in the visible region. In summary, the uniform ZnO thin films were deposited by mist CVD. Vacuum annealing is an effective method to increase the average grain size as well as improve the crystallinity of as-deposited ZnO films