[13a-S203-1~9] 6.3 Oxide electronics

[13a-S203-6] Reduction in resistivity of MOCVD-grown CuO thin films by post-annealing

〇Mitsunobu Narushima¹, Shinya Ise¹, kohei Kawai¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst of Tech., 2.Int. Res. Center for Green Electronics)

Keywords:CuO, annealing, MOCVD

We have fabricated CuO thin films by metal organic vapor deposition (MOCVD), but they have problems with high resistivity and no clear p-type conduction. In this study, we attempted Na doping of MOCVD-grown CuO thin films by post-annealing treatment in sodium chloride and sodium acetate powders. After annealing at 325 - 330°C in sodium acetate powder, both the resistance and its activation energy of the films were decreased without thermal electromotive force (TEF). After further annealing in oxygen ambient at 500°C, a significant reduction by two orders of magnitude in resistance and clear TEF (p-type) was observed with a slight increase in the activation energy. We believe that this significant reduction in resistance is due to the improvement of crystal quality by annealing rather than activation of Na.