Characterizations of microstructures in AlN hetero-epitaxial films grown by ammonia-free high-temperature MOVPE

Xu-Qiang Shen; Hirofumi Matsuhata; Kazutoshi Kojima

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Masataka Imura(NIMS), Tomoyuki Tanikawa(Osaka Univ.), Shuhei Ichikawa(Osaka Univ.)

4:00 PM - 4:15 PM

[13p-N101-12] Characterizations of microstructures in AlN hetero-epitaxial films grown by ammonia-free high-temperature MOVPE

〇Xu-Qiang Shen¹, Hirofumi Matsuhata¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:AlN

We proposed a new growth technique, named ammonia-free high-temperature MOVPE, for the AlN growth. In this conference, we report the characterization results of microstructures in AlN hetero-epitaxial films grown by this technique.