Growth and characterizaton of Ga0.83In0.17N on ScAlMgO4 substrate

Ryo Takahashi; Han Dong-Pyo; Ryoto Fujiki; Keisuke Hozo; Ryoya Hiramatsu; Kanato Sawai; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Makoto Matsukura; Takahiro Kojima

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Masataka Imura(NIMS), Tomoyuki Tanikawa(Osaka Univ.), Shuhei Ichikawa(Osaka Univ.)

2:15 PM - 2:30 PM

[13p-N101-6] Growth and characterizaton of Ga_0.83In_0.17N on ScAlMgO₄ substrate

〇Ryo Takahashi¹, Han Dong-Pyo¹, Ryoto Fujiki¹, Keisuke Hozo¹, Ryoya Hiramatsu¹, Kanato Sawai¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Makoto Matsukura², Takahiro Kojima² (1.Meijo Univ., 2.OXIDE Co.)

Keywords:ScAlMgO4 substrate, GaInN

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Presentation information

[13p-N101-1~18] 15.4 III-V-group nitride crystals

[13p-N101-6] Growth and characterizaton of Ga0.83In0.17N on ScAlMgO4 substrate

[13p-N101-6] Growth and characterizaton of Ga_0.83In_0.17N on ScAlMgO₄ substrate