[13p-N105-1~14] 3.9 テラヘルツ全般

▲ [13p-N105-1] Frequency Increase in Resonant-Tunneling Diode Cavity-type Terahertz Oscillator

〇(DC)Mikhail Bezhko¹、Shota Iino¹、Safumi Suzuki¹、Masahiro Asada¹ (1.Tokyo Tech)

キーワード：Resonant Tunneling Diode, THz Oscillator, Terahertz frequencies

Terahertz (THz) radiation, in the range between the light waves and millimeter waves, has attracted much attention because of its applications. Oscillators using resonant tunneling diodes (RTDs) are major candidates for THz sources, because of their operation at room temperature and compactness. To achieve oscillation frequencies more than 2 THz, new RTD THz oscillator structure based on low conduction loss cavity resonator was proposed. In the first fabrication trial, we obtained oscillation frequencies only up to 1.79 THz due to influence of a parasitic capacitance around the RTD mesa. To optimize structure parameters and reach higher frequencies, oscillation frequency limitations and structure dependences were analyzed. In this work we achieved increase of oscillation frequency of more than 250GHz at frequencies around 1.5 – 1.7 THz by using improved structure and fabrication process.