[13p-N105-1~14] 3.9 Terahertz technologies

[13p-N105-8] 3D Rectification Effect in Dual-Grating-Gate Plasmonic THz Detector

〇Akira Satou¹, Takumi Negoro¹, Tomotaka Hosotani¹, Yuma Takida², Hiromasa Ito², Hiroaki Minamide², Taiichi Otsuji¹ (1.RIEC, Tohoku Univ., 2.RAP, RIKEN)

Keywords:2D plasmon, 3D rectification effect

For a dual-grating-gate plasmonic THz detector with the readout configuration of the detection signal from the gate electrode, it is expected that a diode current nonlinear rectification effect by the heterobarrier formed between InGaAs channel and InAlAs spacer layers cooperates with the two-dimensional plasmonic nonlinear rectification effect and results in a further enhancement of the responsivity (3D rectification effect). In this study, we report that the output photovoltage is drastically enhanced by applying a positive gate bias voltage to the detector due to the occurrence of 3D rectification effect.