[13p-N321-1~15] 3.11 Photonic structures and phenomena

▼ [13p-N321-9] Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er,O-codoped GaAs

〇(D)Zhidong Fang¹, Ryohei Homi¹, Masayuki Ogawa¹, Hirotake Kajii¹, Masahiko Kondow¹, Shuuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:semiconductor, photoluminescence, photonic crystal

Quantum communication, storage, and computing show potential as the next-generation information technologies, and have been recently attracting scientific attention. Above all, controllable, stable, and repeatable single photon emitters (SPEs) have been of great significance as the important component of quantum information systems. In this contribution, we propose and demonstrate a bridge-type photonic crystal (PhC) to realize high quality(Q)-factor. Numerical simulations of PhC nanocavities with different numbers of holes were carried out to investigate the effect of the number of holes in the bridge-type structure on the higher-order modes and Q-factor, and a maximum design Q-factor of 1.2 × 10⁶ was obtained. Bridge-type PhC nanocavities with Er,O-doped GaAs as an active component are prepared, and their optical characterization is characterized. With the PhC nanocavities, the peak intensity of Er-2O luminescence is enhanced by a factor of 7.3 at a pump power of 40 nW. The linewidth based on the cavity mode of the luminescence spectrum is ~0.128 nm, which corresponds almost to the resolution limit of the μ-PL setup. The experimental Q-factor is estimated to be greater than 1.2 × 10⁴. The observed enhancement is due to the Purcell effect, which could lead to a shorter lifetime of Er luminescence.