[13p-N323-1~14] CS.11 Code-sharing Session of 8.3 & 9.2 & 13.6 & 15.3

[13p-N323-12] Nucleation mechanism of GaAs nanowires on Si(111) substrates by constituent Ga self-catalyzed molecular beam epitaxy

〇(M1)Ryo Murakami¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

Keywords:Nanowires, molecular beam epitaxy, Si substrate

We investigate the feature of initial nucleation and development of GaAs nanowires on Si(111) substrate grown by constituent Ga induced self-catalyzed molecular beam epitaxy. Finely varying the growth steps at the initial growth stage at the nucleation and the following nanowires growth, we investigate their feature by reflection high energy electron diffraction, x-ray diffraction, and cross-sectional transmission electron microscopy. We find a peak at the higher angle side of Si(111) substrate for the x-ray diffraction pattern near the Si(111) peak at the initial nucleation stage. GaAs(111) peaks subsequently appears after proceeding the growth by supplying Ga and As on the growth front. The result provides the understanding of the development of strain status of the GaAs nanowires.