[13p-S201-1~14] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [13p-S201-11] Nondestructive Characterization of Carrier Density and Mobility in Beta-Ga₂O₃ Using Terahertz Waves

〇(P)Verdad Canila Agulto¹、Toshiyuki Iwamoto²、Kazuhiro Toya¹、Valynn Katrine Mag-usara¹、Ken Goto³、Hisashi Murakami³、Yoshinao Kumagai³、Makoto Nakajima¹ (1.Osaka University、2.PNP、3.TUAT)

キーワード：gallium oxide, nondestructive characterization, electrical properties

We employed terahertz time-domain spectroscopy (THz-TDS) to evaluate the electrical properties of a homoepitaxial Si-doped beta-Ga₂O₃ film deposited on a semi-insulating c^*-oriented substrate. Transmission THz measurements were performed on the bulk substrate and the epilayer, and the complex refractive index was then obtained. The effects of free carriers and phonons are observed in the complex refractive index from which the carrier density and mobility parameters were extracted. The results are in good agreement with Hall measurements. But unlike electrical characterization methods, THz-TDS does not require the attachment of metal contacts that damage the sample surface. Therefore, THz-TDS is an attractive technique for the accurate and nondestructive characterization of wide-bandgap semiconductors which would benefit the development of device applications.