The 82nd JSAP Autumn Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 13, 2021 1:00 PM - 4:45 PM S201 (Oral)

Takeyoshi Onuma(Kogakuin Univ.), Ken Goto(Tokyo Univ. Agri. and Tech.)

2:30 PM - 2:45 PM

[13p-S201-7] Local electronic structure of hydrogen in wide-gap semiconductor β-Ga2O3 II

〇Masatoshi Hiraishi1, Hirotaka Okabe1, Akihiro Koda1,2, Ryosuke Kadono1,2, Keisuke Ide3, Toshio Kamiya3,4, Hideo Hosono4 (1.KEK-IMSS, 2.Sokendai, 3.Tokyo Tech MSL, 4.Tokyo Tech (MCES))

Keywords:Ga2O3, Muon, Hydrogen

We conducted muon spin rotation experiments to investigate the electronic states of muons as pseudo hydrogen in β-Ga2O3.
We observed a component Mu1 exhibiting the spin relaxation and a component Mu2 not exhibiting the relaxation.
The relaxation of the Mu2 component may be suprressed by the fast motion of the muon itself.
In my presentation, we will discuss the details of the motion from the temperature dependence of the volume fraction of Mu2 and the results of first-principles calculations.