[13p-S203-1~15] 6.3 Oxide electronics

[13p-S203-4] Colossal gate modulation of the VO₂ phase transition speed in solid-state devices

〇Takeaki Yajima¹, Yusai Wakafuji², Akira Toriumi² (1.Kyushu Univ., 2.Univ. of Tokyo)

Keywords:field effect, phase transition, transient effect

Transient characteristics of gate voltage induced phase transitions were systematically investigated using solid gate VO₂ channel transistors. The results show that the gate modulation effect, which is small in the static characteristics, becomes more apparent in the transient characteristics, and that this is due to the fact that a population of at least 4400 vanadium atoms amplifies the gate modulation effect.