Magnetic field dependence of antiferromagnetic domain wall velocity driven by magnetoelectric effect

Jiaqi Shen; Kentaro Toyoki; Tatsuo Tada; Yoshinori Kotani; Ryoichi Nakatani; Yu Shiratsuchi

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

[13p-S302-1~15] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

Mon. Sep 13, 2021 1:30 PM - 5:45 PM S302 (Oral)

Takeshi Seki(Tohoku Univ.), Taro Nagahama(Hokkaido Univ.), Shinya Kasai(NIMS)

3:15 PM - 3:30 PM

▼ [13p-S302-7] Magnetic field dependence of antiferromagnetic domain wall velocity driven by magnetoelectric effect

〇(M2)Jiaqi Shen¹, Kentaro Toyoki¹, Tatsuo Tada¹, Yoshinori Kotani³, Ryoichi Nakatani^1,2, Yu Shiratsuchi^1,2 (1.Grad. Sch. Eng., 2.CSRN, Osaka Univ., 3.JASRI/SPring-8)

Keywords:magneto-electric effect, Cr2O3, domain wall velocity

Recent development of spintronics enabled us to control antiferromagnetic (AFM) moments/domains. We have been reported that the AFM domain state of the Cr₂O₃ thin film in the Pt/Co/Au/Cr₂O₃/Pt thin film could be controlled by using the magneto-electric (ME) effect including the ME-induced AFM domain wall (AFM-DW) velocity. In this scheme, similar to the ferromagnetic DW motion, it is expected that the effective damping parameter can be evaluated based on the magnetic-field dependence of the AFM-DW velocity which is presented in this work.