[13p-S302-1~15] 10.1 新物質・新機能創成（作製・評価技術）

▼ [13p-S302-7] Magnetic field dependence of antiferromagnetic domain wall velocity driven by magnetoelectric effect

〇(M2)Jiaqi Shen¹、Kentaro Toyoki¹、Tatsuo Tada¹、Yoshinori Kotani³、Ryoichi Nakatani^1,2、Yu Shiratsuchi^1,2 (1.Grad. Sch. Eng.、2.CSRN, Osaka Univ.、3.JASRI/SPring-8)

キーワード：magneto-electric effect, Cr2O3, domain wall velocity

Recent development of spintronics enabled us to control antiferromagnetic (AFM) moments/domains. We have been reported that the AFM domain state of the Cr₂O₃ thin film in the Pt/Co/Au/Cr₂O₃/Pt thin film could be controlled by using the magneto-electric (ME) effect including the ME-induced AFM domain wall (AFM-DW) velocity. In this scheme, similar to the ferromagnetic DW motion, it is expected that the effective damping parameter can be evaluated based on the magnetic-field dependence of the AFM-DW velocity which is presented in this work.