[21p-P01-1~31] 2 放射線(ポスター)

▲ [21p-P01-11] Optical and scintillation properties of Nd-doped La₂Si₂O₇ crystal

〇(D)Prom Kantuptim¹、Masaki Akatsuka¹、Daisuke Nakauchi¹、Takumi Kato¹、Noriaki Kawaguchi¹、Takayuki Yanagida¹ (1.NAIST)

キーワード：scintillator, Nd3+, near-infrared region

Since the scintillator plays the role of the first stage of the detection of ionizing radiation in a detector form, total detector performance largely depends on the scintillation properties of the scintillation detector. The Nd-doped inorganic crystal becomes interested in research due to the emission in the near-infrared region (NIR). For example, the Nd-doped LuAG was studied for implementation in the X-ray imaging application when it was combined with a Si-based photodetector. In 2020, our group investigated the Nd-doped Lu₂Si₂O₇ (LPS) in scintillation properties. The Nd-doped LPS has scintillation spectra showed emission in both UV-visible and NIR wavelengths with scintillation decay times were around 3–4 μs. However, the La and Lu can be a substitute in the host materials. For systematic study of Pyrosilicate host materials, Nd-doped La₂Si₂O₇ (LaPS) is necessary. This research has aimed to study and investigate the LaPS for the new host materials for Nd on both photoluminescence and scintillation properties. The Nd-doped LaPS single crystal was synthesized by the floating-zone method as well as Undoped LaPS. In X-ray-induced scintillation spectra of both samples observed in the UV-visible region, Nd-doped LaPS showed the intense emission at 400 nm due to Nd^{3+ 2}F_5/2→⁴F_5/2 transition, with the host emission at around 350 nm. For the X-ray induced scintillation spectrum of Nd-doped LaPS crystals in the NIR range, the spectrum showed several emission peaks were appeared due to the electronics transition of Nd^{3+ 4}F_3/2→⁴I_9/2 (900 nm), ⁴F_3/2→⁴I_11/2 (1060 nm), and ⁴F_3/2→⁴I_13/2 (1320 nm).