[21p-P01-1~31] 2 Ionizing Radiation(Poster)

[21p-P01-25] Preparation of Ce³⁺:Lu₃Al₅O₁₂ thick film phosphors via chemical vapor deposition and their luminscence properties

〇(DC)Shogen Matsumoto¹, Shunsuke Kurosawa^2,3, Akira Yoshikawa^2,3, Akihiko Ito¹ (1.Yokohama Natl. Univ., 2.IMR Tohoku Univ., 3.NICHe Tohoku Univ.)

Keywords:Lu3Al5O12, chemical vapor deposition, luminescence

We demonstrate the high-speed deposition of Ce³⁺:Lu₃Al₅O₁₂ (Ce³⁺:LuAG) thick film phosphor grown by laser-assisted chemical vapor deposition. The radio-luminescence properties of the film are compared with those of Ce³⁺:LuAG single crystals. The (100) Ce³⁺-LuAG thick film was epitaxially grown on (100) Y₃Al₅O₁₂ substrate at a deposition rate of 58 μm s⁻¹. Under ultraviolet and X-ray irradiations, the film emitted a yellow-green light originating from 5d–4f transitions of Ce³⁺ ions. Under α-ray excitation from a ²⁴¹Am source, the scintillation decay curve of the Ce³⁺:LuAG thick film was fitted to two time constants, 43 and 447 ns, associated with the Ce³⁺ centers and antisite defects in garnet structures, respectively.