[22a-P09-1~14] 10 Spintronics and Magnetics(Poster)

▲ [22a-P09-3] Temperature dependence of current-induced effective magnetic field acting on domain wall in SrRuO₃

〇Takaki Sakai¹, Michihiko Yamanouchi¹, Yasufumi Araki², Tetsuya Uemura¹, Hiromichi Ohta^3,1, Junichi Ieda² (1.Graduate School of IST Hokkaido Univ., 2.ASRC JAEA, 3.RIES Hokkaido Univ.)

Keywords:SrRuO3, Weyl points, domain wall

Current-induced domain wall (DW) motion is one of schemes for electrical manipulation of magnetization direction in spintronics devices. Current density required for the DW motion in a ferromagnetic oxide SrRuO₃ (SRO) is 1-2 orders of magnitude lower than that in ferromagnetic metals, and we have shown that the applied current acts as an effective magnetic field H_eff on the DW in SRO. To elucidate the origin of the H_eff, we investigated H_eff in wide temperature range. The ratio of H_eff acting on the DW to current increases with decreasing temperature around the ferromagnetic transition temperature, whereas it shows nonmonotonic temperature dependence at low temperatures. Since SRO has many Weyl points near Fermi level and transverse resistance shows nonmonotonic temperature dependence originating from Berry curvature arising from Weyl points, Weyl fermions can affect the DW motion.