The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

10 Spintronics and Magnetics » 10 Spintronics and Magnetics(Poster)

[22a-P09-1~14] 10 Spintronics and Magnetics(Poster)

Wed. Sep 22, 2021 11:00 AM - 12:40 PM P09 (Poster)

11:00 AM - 12:40 PM

[22a-P09-3] Temperature dependence of current-induced effective magnetic field acting on domain wall in SrRuO3

Takaki Sakai1, Michihiko Yamanouchi1, Yasufumi Araki2, Tetsuya Uemura1, Hiromichi Ohta3,1, Junichi Ieda2 (1.Graduate School of IST Hokkaido Univ., 2.ASRC JAEA, 3.RIES Hokkaido Univ.)

Keywords:SrRuO3, Weyl points, domain wall

Current-induced domain wall (DW) motion is one of schemes for electrical manipulation of magnetization direction in spintronics devices. Current density required for the DW motion in a ferromagnetic oxide SrRuO3 (SRO) is 1-2 orders of magnitude lower than that in ferromagnetic metals, and we have shown that the applied current acts as an effective magnetic field Heff on the DW in SRO. To elucidate the origin of the Heff, we investigated Heff in wide temperature range. The ratio of Heff acting on the DW to current increases with decreasing temperature around the ferromagnetic transition temperature, whereas it shows nonmonotonic temperature dependence at low temperatures. Since SRO has many Weyl points near Fermi level and transverse resistance shows nonmonotonic temperature dependence originating from Berry curvature arising from Weyl points, Weyl fermions can affect the DW motion.