2021年第82回応用物理学会秋季学術講演会

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8 プラズマエレクトロニクス » 8 プラズマエレクトロニクス(ポスター)

[22p-P01-1~12] 8 プラズマエレクトロニクス(ポスター)

2021年9月22日(水) 13:00 〜 14:40 P01 (ポスター)

13:00 〜 14:40

[22p-P01-10] Development of Yttrium Oxide Deposition Process using Microwave Excited Atmospheric Pressure Plasma Jet

〇(M1)BatOrgil Oogii Erdenezaya1、Ryosuke Shimizu1、Sai Ngaunn Hseng1、Kenta Kametani1、Takeshi Aizawa1、Yusuke Nakano1、Yasunori Tanaka1、Tetsuya Taima1、Tatsuo Ishijima1 (1.Kanazawa Univ.)

キーワード:Yttrium oxide, Plasma enhanced chemical vapor deposition, Microwave plasma

Yttrium oxide (Y2O3) is one of the most promising materials for plasma resistant materials inside the chamber because of its high chemical stability up to 2300 oC as well as its high thermal stability compared to the conventional alumina and other ceramic materials. At a higher integration density, a higher plasma density and extremely low particle generation is required in the semiconductor chip fabrication process [1].
In this study, we aim to develop a Y2O3 film formation method and investigate its applicability using a Microwave-excited Atmospheric Pressure Plasma Jet (MW-APPJ). Ar gas was introduced into a Y2O3-containing organic precursor solution in order to carry precursor to plasma generated region.