[22p-P01-1~12] 8 プラズマエレクトロニクス(ポスター)

▲ [22p-P01-10] Development of Yttrium Oxide Deposition Process using Microwave Excited Atmospheric Pressure Plasma Jet

〇(M1)BatOrgil Oogii Erdenezaya¹、Ryosuke Shimizu¹、Sai Ngaunn Hseng¹、Kenta Kametani¹、Takeshi Aizawa¹、Yusuke Nakano¹、Yasunori Tanaka¹、Tetsuya Taima¹、Tatsuo Ishijima¹ (1.Kanazawa Univ.)

キーワード：Yttrium oxide, Plasma enhanced chemical vapor deposition, Microwave plasma

Yttrium oxide (Y₂O₃) is one of the most promising materials for plasma resistant materials inside the chamber because of its high chemical stability up to 2300 ^oC as well as its high thermal stability compared to the conventional alumina and other ceramic materials. At a higher integration density, a higher plasma density and extremely low particle generation is required in the semiconductor chip fabrication process [1].
In this study, we aim to develop a Y₂O₃ film formation method and investigate its applicability using a Microwave-excited Atmospheric Pressure Plasma Jet (MW-APPJ). Ar gas was introduced into a Y₂O₃-containing organic precursor solution in order to carry precursor to plasma generated region.