[22p-P01-1~12] 8 Plasma Electronics(Poster)

[22p-P01-8] Consideration of Growth Mechanism of Amorphous Carbon Films during Acetylene Plasma

〇(M1)Tatsuo Nakai¹, Atsuya Kuwada¹, Ryou Sasamoto¹, Masanori Shinohara¹ (1.Fukuoka Univ.)

Keywords:amorphous carbon film, acetylene plasma, multiple-internal-reflection Infrared absorption spectroscopy

An amorphous carbon film has been used in a lot of industries, because of its useful properties. However, growth mechanisms of the film have not been understood. Then, we measured the deposition process during acetylene plasma with MIR-IRAS (multiple-internal-reflection Infrared absorption spectroscopy), to understand growth mechanisms. Measured IR absorption peaks are increased with the deposition time. Here we noticed the increasing rate of each peak is different. It indicates that generation rate of each component is different.From these results, we discuss deposition reactions on the film surface.