[23a-P04-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-P04-2] Thickness dependence of polarized Raman spectra in topological insulator Bi₂Se₃ epitaxial films

〇Takamu Nozaki¹, Tomohiro Kondo¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:Bi2Se3, topological insulator

In this study, Bi2Se₃ epitaxial films with different thicknesses were grown using a low-temperature one-step growth method at a substrate temperature of 120 ºC, and the polarization Raman spectra were measured. As a result, we found that the two-dimensional limiting thickness of the Bi₂Se₃ epitaxial film, where the gap opens at the Dirac point, can be estimated by evaluating the degree of polarization resolution.