[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

[23a-P10-1] Roughness Reduction Processing of 4H-SiC 3D structure formed by Dry Etching Process

〇Tadashi Sato¹, Riku Takeuchi¹, Takuma Shima¹, Vuong Van Cuong¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ.)

Keywords:4H-SiC, roughness, oxidation

The surface roughness of semiconductor material is one of the most important issues that degrades characteristics of semiconductor devices. In this research, the effect of oxidation process on side surface roughness of 4H-SiC 3D structure, which was formed by dry etching process, was investigated. Based on AFM results, it was found that, by applying the oxidation process, the 4H-SiC side surface roughness obtained after the dry etching was greatly improved.