The 82nd JSAP Autumn Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P10 (Poster)

11:00 AM - 12:40 PM

[23a-P10-1] Roughness Reduction Processing of 4H-SiC 3D structure formed by Dry Etching Process

Tadashi Sato1, Riku Takeuchi1, Takuma Shima1, Vuong Van Cuong1, Shin-Ichiro Kuroki1 (1.Hiroshima Univ.)

Keywords:4H-SiC, roughness, oxidation

The surface roughness of semiconductor material is one of the most important issues that degrades characteristics of semiconductor devices. In this research, the effect of oxidation process on side surface roughness of 4H-SiC 3D structure, which was formed by dry etching process, was investigated. Based on AFM results, it was found that, by applying the oxidation process, the 4H-SiC side surface roughness obtained after the dry etching was greatly improved.